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11PH - Photodetector
Standa
11PH
11PH - Photodetector 光偵測器
11PH 系列矽光偵測器具備寬大的感測口徑，可量測直徑達 10 mm 的雷射光束。其具螺紋設計的入光口可安裝濾光片、減光器、光纖轉接器或其他光學元件，以滿足不同應用需求。所有偵測器皆具備可追溯至 NIST 的校正，以及專利的個人化波長校正功能。此系列特別適用於 210 至 1650 nm 波段的低功率連續波雷射應用。若需擴展量測功率範圍，可搭配選購的減光器使用。OD1 型減光器的透光率為 10%，OD2 型的透光率為 1%。若偵測器與減光器一同購買，將會同時進行有與無減光器的雙重校正。
主要特色
• 大口徑感測面
矽感測器口徑達 10 mm
• 三種版本可選
Silicon：350 – 1080 nm，最高可量測 750 mW
Silicon-UV：210 – 1080 nm，最高可量測 25 mW
Germanium：800 – 1650 nm，最高可量測 500 mW
• 可選用多種減光器
OD0.3：50% 透光率（僅適用於 11PH100-SiUV）
OD1：10% 透光率
OD2：1% 透光率
• 高精度量測
最新型 11PH100-Si-HA 提供目前最低的校正不確定度
• 精密校正能力
波長設定可精確至 1 nm 間距
• 智慧型介面
內含所有校正數據
相容監測儀：
 11MAESTRO |
 11UNO |
 11TUNER |
 11M-LINK |
 11P-Link |
 11S-LINK |
相似產品：
 |
 |
 |
| 11XLP12 | 11QE12 | 11UP19-H |
11PH series silicon photodetectors provide a generous aperture for laser beams up to 10 mm in diameter. The threaded aperture allows you to install filters, attenuators, fiber optic adapters or other optics that suit your specific needs. All of the detectors have a NIST traceable calibration and Personal wavelength correction™. This is the choice for typical low power CW lasers from 210 to 1650 nm. To extend the performance of the photo detectors to higher measurable powers you can select one of our attenuators. The transmission of the OD1 is 10% and the transmission of the OD2 is 1%. When bought together, the detector is calibrated with and without the attenuator.
Main Features
• Large Apertures
10 mm Ø for the Silicon sensors
• 3 Version
Silicon: 350 - 1080 nm, up to 750 mW
Silicon-UV: 210 - 1080 nm, up to 25 mW
Germanium: 800 - 1650 nm, up to 500 mW
• Choice of Attenuators
OD0.3: 50 % Transmission (for 11PH100-SiUV only)
OD1: 10 % Transmission
OD2: 1 % Transmission
• High Accuracy
The new 11PH100-Si-HA presents the lowest calibration uncertainty to date
• Precise Calibration
Wavelength selection in 1 nm steps
• Smart Interface
Containing all the calibration data
Compatible Monitors:
11MAESTRO |
11UNO |
11TUNER |
11M-LINK |
11P-Link |
11S-LINK |
Similar products:
|
|
|
| 11XLP12 | 11QE12 | 11UP19-H |
| Model | 11PH100-Si-HA | 11PH100-SiUV | 11PH20-Ge |
| MAX AVERAGE POWER (ALONE / WITH OD2) | 36 mW / 750 mW | 4 mW / 30 mW | 30 mW / 500 mW |
| EFFECTIVE APERTURE | 10 mm Ø | 10 mm Ø | 5 mm Ø |
| MEASUREMENT CAPABILITY | |||
| Spectral Range | 350 – 1080 nm | 210 – 1080 nm | 800 – 1650 nm |
| With OD0.3 | --- | 210 – 1080 nm | --- |
| With OD1 | 420 – 1080 nm | 400 – 1080 nm | 900 – 1650 nm |
| With OD2 | 630 – 1080 nm | --- | 950 – 1650 nm |
| Maximum Measurable Power a | 36 mW @ 1064 nm | 4 mW @ 532 nm | 30 mW @ 1064 nm |
| With OD0.3 | --- | 11 mW @ 300 nm | --- |
| With OD1 | 300 mW @ 1064 nm | 25 mW @ 532 nm | 300 mW @ 1064 nm |
| With OD2 | 750 mW @ 1064 nm | --- | 500 mW @ 1064 nm |
| Noise Equivalent Power b | 10 pW @ 980 nm | 10 pW @ 850 nm | 60 pW @ 1550 nm |
| Rise Time (nominal) | 0.2 sec | 0.2 sec | 0.2 sec |
| Peak Sensitivity | 0.5 A/W @ 980 nm | 0.45 A/W @ 850 nm | 0.98 A/W @ 1550 nm |
| Calibration Uncertainty | ±6.0 % (350 - 399 nm) ±2.0 % (400 - 449 nm) ±1.5 % ( 450 - 940 nm) ±2.0 % (941 - 980 nm) ±5.0 % (981 - 1049 nm) ±7.0 % (1050 - 1080 nm) |
±8 % (200 - 219 nm) ±6.5 % (220 - 399 nm) ±2.5 % (400 - 899 nm) ±3.5 % (900 - 999 nm) ±5 % (1000 - 1049 nm) ±7 % (1050 - 1080 nm) |
±3.5 % (800 - 1650 nm) --- --- --- --- --- |
| Calibration Uncertainty (with OD filters) | ±4.0 % (420 - 980 nm) ±5.0 % (981 - 1049 nm) ±7.0 % (1050 - 1080 nm) |
±6.5 % (210 - 399 nm) ±5 % (400 - 1049 nm) ±7 % (1050 - 1080 nm) |
±5 % |
| DAMAGE THRESHOLDS | |||
| Maximum Average Power Density | 100 W/cm2 | 100 W/cm2 | 100 W/cm2 |
| PHYSICAL CHARACTERISTICS | |||
| Effective Aperture | 10 mm Ø | 10 mm Ø | 5 mm Ø |
| Dimensions | 38.1O x 27.4D mm | 38.1O x 27.4D mm | 38.1O x 27.4D mm |
| Weight (head only) | 130 g | 130 g | 130 g |
Specifications are subject to change without notice
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